IXTP170N075T2 IXYS
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 360W; TO220AB; 63ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 170A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 5.4mΩ
Mounting: THT
Gate charge: 109nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 63ns
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 360W; TO220AB; 63ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 170A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 5.4mΩ
Mounting: THT
Gate charge: 109nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 63ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 40 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
18+ | 4.02 EUR |
20+ | 3.62 EUR |
24+ | 3 EUR |
26+ | 2.83 EUR |
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Technische Details IXTP170N075T2 IXYS
Description: MOSFET N-CH 75V 170A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 170A (Tc), Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V, Power Dissipation (Max): 360W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 75 V, Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6860 pF @ 25 V.
Weitere Produktangebote IXTP170N075T2 nach Preis ab 2.83 EUR bis 7.87 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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IXTP170N075T2 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 360W; TO220AB; 63ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 170A Power dissipation: 360W Case: TO220AB On-state resistance: 5.4mΩ Mounting: THT Gate charge: 109nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 63ns |
auf Bestellung 40 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTP170N075T2 | Hersteller : IXYS | MOSFETs 170 Amps 75V |
auf Bestellung 112 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTP170N075T2 | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 75V 170A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V Power Dissipation (Max): 360W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6860 pF @ 25 V |
auf Bestellung 350 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTP170N075T2 | Hersteller : Littelfuse | Trans MOSFET N-CH 75V 170A Automotive 3-Pin(3+Tab) TO-220 |
Produkt ist nicht verfügbar |
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IXTP170N075T2 | Hersteller : Littelfuse | Trans MOSFET N-CH 75V 170A 3-Pin(3+Tab) TO-220 |
Produkt ist nicht verfügbar |