![IXTP10P50P IXTP10P50P](https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/5545/238%7ETO220-3-TO220AB%7E%7E3.jpg)
IXTP10P50P Littelfuse Inc.
![littelfuse_discrete_mosfets_p-channel_ixt_10p50p_datasheet.pdf.pdf](/images/adobe-acrobat.png)
Description: MOSFET P-CH 500V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
auf Bestellung 1253 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 10.58 EUR |
50+ | 8.44 EUR |
100+ | 7.55 EUR |
500+ | 6.66 EUR |
1000+ | 6 EUR |
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Technische Details IXTP10P50P Littelfuse Inc.
Description: MOSFET P-CH 500V 10A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V.
Weitere Produktangebote IXTP10P50P nach Preis ab 6.72 EUR bis 10.75 EUR
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IXTP10P50P | Hersteller : IXYS |
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auf Bestellung 708 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTP10P50P | Hersteller : IXYS SEMICONDUCTOR |
![]() tariffCode: 85412900 Drain-Source-Spannung Vds: 500V rohsCompliant: YES Dauer-Drainstrom Id: 10A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.5V euEccn: NLR Verlustleistung: 300W Anzahl der Pins: 3Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1ohm |
auf Bestellung 45 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTP10P50P | Hersteller : Littelfuse |
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Produkt ist nicht verfügbar |
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IXTP10P50P | Hersteller : Littelfuse |
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Produkt ist nicht verfügbar |
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IXTP10P50P | Hersteller : IXYS |
![]() Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO220AB Type of transistor: P-MOSFET Technology: PolarP™ Polarisation: unipolar Drain-source voltage: -500V Drain current: -10A Power dissipation: 300W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 1Ω Mounting: THT Gate charge: 50nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 414ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXTP10P50P | Hersteller : IXYS |
![]() Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO220AB Type of transistor: P-MOSFET Technology: PolarP™ Polarisation: unipolar Drain-source voltage: -500V Drain current: -10A Power dissipation: 300W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 1Ω Mounting: THT Gate charge: 50nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 414ns |
Produkt ist nicht verfügbar |