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IXTP05N100M Littelfuse Inc.
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Description: MOSFET N-CH 1000V 700MA TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Tc)
Rds On (Max) @ Id, Vgs: 17Ohm @ 375mA, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 25µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
auf Bestellung 1450 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3+ | 6.48 EUR |
50+ | 5.13 EUR |
100+ | 4.4 EUR |
500+ | 3.91 EUR |
1000+ | 3.35 EUR |
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Technische Details IXTP05N100M Littelfuse Inc.
Description: MOSFET N-CH 1000V 700MA TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 700mA (Tc), Rds On (Max) @ Id, Vgs: 17Ohm @ 375mA, 10V, Power Dissipation (Max): 25W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 25µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V.
Weitere Produktangebote IXTP05N100M nach Preis ab 3.41 EUR bis 6.53 EUR
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IXTP05N100M | Hersteller : IXYS |
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auf Bestellung 293 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTP05N100M | Hersteller : Littelfuse |
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IXTP05N100M | Hersteller : Littelfuse |
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Produkt ist nicht verfügbar |
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IXTP05N100M | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1kV; 0.7A; 25W; TO220FP; 710ns Case: TO220FP Reverse recovery time: 710ns Drain-source voltage: 1kV Drain current: 0.7A On-state resistance: 17Ω Type of transistor: N-MOSFET Power dissipation: 25W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: standard power mosfet Kind of channel: enhanced Mounting: THT Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXTP05N100M | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1kV; 0.7A; 25W; TO220FP; 710ns Case: TO220FP Reverse recovery time: 710ns Drain-source voltage: 1kV Drain current: 0.7A On-state resistance: 17Ω Type of transistor: N-MOSFET Power dissipation: 25W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: standard power mosfet Kind of channel: enhanced Mounting: THT |
Produkt ist nicht verfügbar |