![IXTP05N100 IXTP05N100](https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/5545/238%7ETO220-3-TO220AB%7E%7E3.jpg)
IXTP05N100 Littelfuse Inc.
![littelfuse_discrete_mosfets_n-channel_standard_ixta05n100_datasheet.pdf.pdf](/images/adobe-acrobat.png)
Description: MOSFET N-CH 1000V 750MA TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Tc)
Rds On (Max) @ Id, Vgs: 17Ohm @ 375mA, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
auf Bestellung 238 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
4+ | 4.59 EUR |
50+ | 3.64 EUR |
100+ | 3.12 EUR |
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Technische Details IXTP05N100 Littelfuse Inc.
Description: MOSFET N-CH 1000V 750MA TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 750mA (Tc), Rds On (Max) @ Id, Vgs: 17Ohm @ 375mA, 10V, Power Dissipation (Max): 40W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V.
Weitere Produktangebote IXTP05N100 nach Preis ab 2.43 EUR bis 4.63 EUR
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IXTP05N100 | Hersteller : IXYS |
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auf Bestellung 182 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTP05N100 | Hersteller : Littelfuse |
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IXTP05N100 | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO220AB; 710ns Case: TO220AB Reverse recovery time: 710ns Drain-source voltage: 1kV Drain current: 0.75A On-state resistance: 17Ω Type of transistor: N-MOSFET Power dissipation: 40W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: standard power mosfet Kind of channel: enhanced Mounting: THT Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXTP05N100 | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO220AB; 710ns Case: TO220AB Reverse recovery time: 710ns Drain-source voltage: 1kV Drain current: 0.75A On-state resistance: 17Ω Type of transistor: N-MOSFET Power dissipation: 40W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: standard power mosfet Kind of channel: enhanced Mounting: THT |
Produkt ist nicht verfügbar |