IXTP01N100D IXYS
Hersteller: IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO220AB; 2ns
Type of transistor: N-MOSFET
Power dissipation: 25W
Polarisation: unipolar
Kind of package: tube
Gate charge: 0.1µC
Kind of channel: depleted
Mounting: THT
Case: TO220AB
Reverse recovery time: 2ns
Drain-source voltage: 1kV
Drain current: 0.1A
On-state resistance: 80Ω
auf Bestellung 348 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 9+ | 8.64 EUR |
| 12+ | 6.21 EUR |
| 13+ | 5.88 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IXTP01N100D IXYS
Description: MOSFET N-CH 1000V 400MA TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 400mA (Tc), Rds On (Max) @ Id, Vgs: 80Ohm @ 50mA, 0V, FET Feature: Depletion Mode, Power Dissipation (Max): 1.1W (Ta), 25W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 25µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 0V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V.
Weitere Produktangebote IXTP01N100D nach Preis ab 5.88 EUR bis 11.25 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
IXTP01N100D | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO220AB; 2ns Type of transistor: N-MOSFET Power dissipation: 25W Polarisation: unipolar Kind of package: tube Gate charge: 0.1µC Kind of channel: depleted Mounting: THT Case: TO220AB Reverse recovery time: 2ns Drain-source voltage: 1kV Drain current: 0.1A On-state resistance: 80Ω Anzahl je Verpackung: 1 Stücke |
auf Bestellung 348 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||||
 |
IXTP01N100D | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 1000V 400MA TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 400mA (Tc) Rds On (Max) @ Id, Vgs: 80Ohm @ 50mA, 0V FET Feature: Depletion Mode Power Dissipation (Max): 1.1W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 25µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 0V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V |
auf Bestellung 272 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
IXTP01N100D | Hersteller : IXYS |
MOSFET 0.1 Amps 1000V 110 Rds |
auf Bestellung 189 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
IXTP01N100D | Hersteller : LITTELFUSE |
Description: LITTELFUSE - IXTP01N100D - MOSFET, N-CH, 1KV, 0.4A, TO-220 tariffCode: 85412900 Transistormontage: Through Hole Drain-Source-Spannung Vds: 1kV rohsCompliant: YES Dauer-Drainstrom Id: 400mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.5V euEccn: NLR Verlustleistung: 25W Bauform - Transistor: TO-220 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: N Channel Rds(on)-Prüfspannung: 0V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 50ohm directShipCharge: 25 SVHC: No SVHC (17-Dec-2014) |
auf Bestellung 314 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||||
 |
IXTP01N100D | Hersteller : Littelfuse |
Trans MOSFET N-CH Si 1KV 3-Pin(3+Tab) TO-220AD |
Produkt ist nicht verfügbar |
|||||||||||||||||
 |
IXTP01N100D | Hersteller : Littelfuse |
Trans MOSFET N-CH Si 1KV 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |