![IXTN90P20P IXTN90P20P](https://www.mouser.com/images/ixys/lrg/sot-227.jpg)
auf Bestellung 758 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 43.4 EUR |
10+ | 41.18 EUR |
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Technische Details IXTN90P20P IXYS
Description: MOSFET P-CH 200V 90A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 44mOhm @ 500mA, 10V, Power Dissipation (Max): 890W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V.
Weitere Produktangebote IXTN90P20P nach Preis ab 39.71 EUR bis 43.52 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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IXTN90P20P | Hersteller : Littelfuse Inc. |
![]() Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 500mA, 10V Power Dissipation (Max): 890W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V |
auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTN90P20P | Hersteller : Littelfuse |
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Produkt ist nicht verfügbar |
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IXTN90P20P | Hersteller : IXYS |
![]() Description: Module; single transistor; -200V; -90A; SOT227B; screw; Idm: -270A Technology: PolarP™ Polarisation: unipolar Drain-source voltage: -200V Drain current: -90A Pulsed drain current: -270A Power dissipation: 890W Case: SOT227B Gate-source voltage: ±30V On-state resistance: 44mΩ Gate charge: 205nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 315ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Anzahl je Verpackung: 300 Stücke |
Produkt ist nicht verfügbar |
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IXTN90P20P | Hersteller : IXYS |
![]() Description: Module; single transistor; -200V; -90A; SOT227B; screw; Idm: -270A Technology: PolarP™ Polarisation: unipolar Drain-source voltage: -200V Drain current: -90A Pulsed drain current: -270A Power dissipation: 890W Case: SOT227B Gate-source voltage: ±30V On-state resistance: 44mΩ Gate charge: 205nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 315ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
Produkt ist nicht verfügbar |