IXTN30N100L Littelfuse Inc.
Hersteller: Littelfuse Inc.Description: MOSFET N-CH 1000V 30A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 15A, 20V
Power Dissipation (Max): 800W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 545 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 13700 pF @ 25 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 115.02 EUR |
| 10+ | 104.23 EUR |
| 100+ | 93.45 EUR |
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Technische Details IXTN30N100L Littelfuse Inc.
Description: MOSFET N-CH 1000V 30A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 450mOhm @ 15A, 20V, Power Dissipation (Max): 800W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 250µA, Supplier Device Package: SOT-227B, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 545 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 13700 pF @ 25 V.
Weitere Produktangebote IXTN30N100L nach Preis ab 100.13 EUR bis 115.84 EUR
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IXTN30N100L | Hersteller : Littelfuse |
Trans MOSFET N-CH 1KV 30A 4-Pin SOT-227B |
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IXTN30N100L | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 30A; SOT227B; screw; Idm: 70A; 800W Mechanical mounting: screw Electrical mounting: screw Polarisation: unipolar Case: SOT227B Gate charge: 545nC Technology: Linear™ Kind of channel: enhanced Gate-source voltage: ±40V Pulsed drain current: 70A Semiconductor structure: single transistor Reverse recovery time: 1µs Drain-source voltage: 1kV Drain current: 30A On-state resistance: 0.45Ω Power dissipation: 800W Type of module: MOSFET transistor Anzahl je Verpackung: 1 Stücke |
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IXTN30N100L | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 30A; SOT227B; screw; Idm: 70A; 800W Mechanical mounting: screw Electrical mounting: screw Polarisation: unipolar Case: SOT227B Gate charge: 545nC Technology: Linear™ Kind of channel: enhanced Gate-source voltage: ±40V Pulsed drain current: 70A Semiconductor structure: single transistor Reverse recovery time: 1µs Drain-source voltage: 1kV Drain current: 30A On-state resistance: 0.45Ω Power dissipation: 800W Type of module: MOSFET transistor |
Produkt ist nicht verfügbar |