auf Bestellung 268 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 16.76 EUR |
| 10+ | 14.38 EUR |
| 25+ | 13.01 EUR |
| 100+ | 11.97 EUR |
| 250+ | 11.86 EUR |
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Technische Details IXTK82N25P IXYS
Description: MOSFET N-CH 250V 82A TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 82A (Tc), Rds On (Max) @ Id, Vgs: 35mOhm @ 41A, 10V, Power Dissipation (Max): 500W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-264 (IXTK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V.
Weitere Produktangebote IXTK82N25P nach Preis ab 13.47 EUR bis 16.88 EUR
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IXTK82N25P | Hersteller : Littelfuse Inc. |
 Description: MOSFET N-CH 250V 82A TO264Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 82A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 41A, 10V Power Dissipation (Max): 500W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-264 (IXTK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V |
auf Bestellung 31 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTK82N25P | Hersteller : Littelfuse |
Trans MOSFET N-CH 250V 82A 3-Pin(3+Tab) TO-264 |
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IXTK82N25P | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 82A; 500W; TO264 Case: TO264 Mounting: THT Kind of package: tube Type of transistor: N-MOSFET Power dissipation: 500W Polarisation: unipolar Gate charge: 142nC Technology: PolarHT™ Kind of channel: enhanced Gate-source voltage: ±20V Reverse recovery time: 200ns Drain-source voltage: 250V Drain current: 82A On-state resistance: 38mΩ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXTK82N25P | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 82A; 500W; TO264 Case: TO264 Mounting: THT Kind of package: tube Type of transistor: N-MOSFET Power dissipation: 500W Polarisation: unipolar Gate charge: 142nC Technology: PolarHT™ Kind of channel: enhanced Gate-source voltage: ±20V Reverse recovery time: 200ns Drain-source voltage: 250V Drain current: 82A On-state resistance: 38mΩ |
Produkt ist nicht verfügbar |