auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 72.88 EUR |
| 10+ | 68.53 EUR |
| 25+ | 61.62 EUR |
| 50+ | 61.05 EUR |
| 100+ | 57.5 EUR |
| 250+ | 56.94 EUR |
| 500+ | 56.8 EUR |
Produktrezensionen
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Technische Details IXTK22N100L IXYS
Description: MOSFET N-CH 1000V 22A TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 600mOhm @ 11A, 20V, Power Dissipation (Max): 700W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-264 (IXTK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 7050 pF @ 25 V.
Weitere Produktangebote IXTK22N100L nach Preis ab 57.09 EUR bis 73 EUR
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IXTK22N100L | Hersteller : Littelfuse Inc. |
 Description: MOSFET N-CH 1000V 22A TO264Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 11A, 20V Power Dissipation (Max): 700W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-264 (IXTK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 7050 pF @ 25 V |
auf Bestellung 604 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTK22N100L | Hersteller : Littelfuse |
Trans MOSFET N-CH 1KV 22A 3-Pin(3+Tab) TO-264 |
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IXTK22N100L | Hersteller : Littelfuse |
Trans MOSFET N-CH 1KV 22A 3-Pin(3+Tab) TO-264 |
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IXTK22N100L | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 22A; 700W; TO264; 1us Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 22A Power dissipation: 700W Case: TO264 On-state resistance: 0.6Ω Mounting: THT Gate charge: 0.27µC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: linear power mosfet Reverse recovery time: 1µs Anzahl je Verpackung: 1 Stücke |
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IXTK22N100L | Hersteller : LITTELFUSE |
Description: LITTELFUSE - IXTK22N100L - MOSFET, N-CH, 1KV, 22A, TO-264 Transistormontage: Through Hole Drain-Source-Spannung Vds: 1 Dauer-Drainstrom Id: 22 Rds(on)-Messspannung Vgs: 20 Verlustleistung Pd: 700 Bauform - Transistor: TO-264 Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 3 Produktpalette: Linear Series Wandlerpolarität: N Channel Betriebswiderstand, Rds(on): 0.6 Betriebstemperatur, max.: 150 Schwellenspannung Vgs: 5.5 SVHC: To Be Advised |
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IXTK22N100L | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 22A; 700W; TO264; 1us Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 22A Power dissipation: 700W Case: TO264 On-state resistance: 0.6Ω Mounting: THT Gate charge: 0.27µC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: linear power mosfet Reverse recovery time: 1µs |
Produkt ist nicht verfügbar |