IXTK170N10P Littelfuse Inc.
Hersteller: Littelfuse Inc.Description: MOSFET N-CH 100V 170A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 500mA, 10V
Power Dissipation (Max): 715W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-264 (IXTK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 198 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
auf Bestellung 375 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 300+ | 13.98 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IXTK170N10P Littelfuse Inc.
Description: MOSFET N-CH 100V 170A TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 170A (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 500mA, 10V, Power Dissipation (Max): 715W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-264 (IXTK), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 198 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V.
Weitere Produktangebote IXTK170N10P nach Preis ab 10.35 EUR bis 15.22 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IXTK170N10P | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO264 Type of transistor: N-MOSFET Technology: Polar™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 170A Power dissipation: 715W Case: TO264 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: THT Gate charge: 198nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 120ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 126 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||
|
|
IXTK170N10P | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO264 Type of transistor: N-MOSFET Technology: Polar™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 170A Power dissipation: 715W Case: TO264 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: THT Gate charge: 198nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 120ns |
auf Bestellung 126 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||
 |
IXTK170N10P | Hersteller : Littelfuse |
Trans MOSFET N-CH 100V 170A 3-Pin(3+Tab) TO-264 |
Produkt ist nicht verfügbar |
|||||||
 |
IXTK170N10P | Hersteller : Littelfuse |
Trans MOSFET N-CH 100V 170A 3-Pin(3+Tab) TO-264 |
Produkt ist nicht verfügbar |
|||||||
 |
IXTK170N10P | Hersteller : IXYS |
MOSFET 170 Amps 100V 0.009 Ohm Rds |
Produkt ist nicht verfügbar |