IXTK102N65X2 Littelfuse Inc.
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 650V 102A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 51A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-264 (IXTK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10900 pF @ 25 V
Description: MOSFET N-CH 650V 102A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 51A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-264 (IXTK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10900 pF @ 25 V
auf Bestellung 363 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 32.28 EUR |
25+ | 20.74 EUR |
100+ | 19.82 EUR |
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Technische Details IXTK102N65X2 Littelfuse Inc.
Description: MOSFET N-CH 650V 102A TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 102A (Tc), Rds On (Max) @ Id, Vgs: 30mOhm @ 51A, 10V, Power Dissipation (Max): 1040W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-264 (IXTK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10900 pF @ 25 V.
Weitere Produktangebote IXTK102N65X2 nach Preis ab 21.3 EUR bis 32.37 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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IXTK102N65X2 | Hersteller : IXYS | MOSFETs TO264 650V 102A N-CH X2CLASS |
auf Bestellung 298 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTK102N65X2 | Hersteller : Littelfuse | Trans MOSFET N-CH 650V 102A 3-Pin(3+Tab) TO-264 |
Produkt ist nicht verfügbar |
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IXTK102N65X2 | Hersteller : Littelfuse | Trans MOSFET N-CH 650V 102A 3-Pin(3+Tab) TO-264 |
Produkt ist nicht verfügbar |
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IXTK102N65X2 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 102A; 1040W; TO264; 450ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 102A Power dissipation: 1.04kW Case: TO264 On-state resistance: 30mΩ Mounting: THT Gate charge: 152nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 450ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXTK102N65X2 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 102A; 1040W; TO264; 450ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 102A Power dissipation: 1.04kW Case: TO264 On-state resistance: 30mΩ Mounting: THT Gate charge: 152nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 450ns |
Produkt ist nicht verfügbar |