IXTK102N30P Littelfuse Inc.
Hersteller: Littelfuse Inc.Description: MOSFET N-CH 300V 102A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 500mA, 10V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 5V @ 500µA
Supplier Device Package: TO-264 (IXTK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 224 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
auf Bestellung 42 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 25.04 EUR |
| 25+ | 20.27 EUR |
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Technische Details IXTK102N30P Littelfuse Inc.
Description: MOSFET N-CH 300V 102A TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 102A (Tc), Rds On (Max) @ Id, Vgs: 33mOhm @ 500mA, 10V, Power Dissipation (Max): 700W (Tc), Vgs(th) (Max) @ Id: 5V @ 500µA, Supplier Device Package: TO-264 (IXTK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 300 V, Gate Charge (Qg) (Max) @ Vgs: 224 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V.
Weitere Produktangebote IXTK102N30P nach Preis ab 16.67 EUR bis 25.22 EUR
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IXTK102N30P | Hersteller : IXYS |
MOSFET 102 Amps 300V 0.033 Rds |
auf Bestellung 265 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTK102N30P | Hersteller : Littelfuse |
Trans MOSFET N-CH 300V 102A 3-Pin(3+Tab) TO-264AA |
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IXTK102N30P | Hersteller : Littelfuse |
Trans MOSFET N-CH 300V 102A 3-Pin(3+Tab) TO-264AA |
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IXTK102N30P | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 102A; 700W; TO264 Case: TO264 Mounting: THT Kind of package: tube Drain current: 102A On-state resistance: 33mΩ Type of transistor: N-MOSFET Power dissipation: 700W Polarisation: unipolar Gate charge: 224nC Technology: PolarHT™ Kind of channel: enhanced Gate-source voltage: ±20V Reverse recovery time: 250ns Drain-source voltage: 300V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXTK102N30P | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 102A; 700W; TO264 Case: TO264 Mounting: THT Kind of package: tube Drain current: 102A On-state resistance: 33mΩ Type of transistor: N-MOSFET Power dissipation: 700W Polarisation: unipolar Gate charge: 224nC Technology: PolarHT™ Kind of channel: enhanced Gate-source voltage: ±20V Reverse recovery time: 250ns Drain-source voltage: 300V |
Produkt ist nicht verfügbar |