IXTH6N150 Littelfuse Inc.
Hersteller: Littelfuse Inc.Description: MOSFET N-CH 1500V 6A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 500mA, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 25 V
auf Bestellung 170 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 18.62 EUR |
| 30+ | 15.08 EUR |
| 120+ | 14.19 EUR |
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Technische Details IXTH6N150 Littelfuse Inc.
Description: MOSFET N-CH 1500V 6A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 3.5Ohm @ 500mA, 10V, Power Dissipation (Max): 540W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247 (IXTH), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1500 V, Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 25 V.
Weitere Produktangebote IXTH6N150 nach Preis ab 12.37 EUR bis 18.76 EUR
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IXTH6N150 | Hersteller : IXYS |
MOSFET HIGH VOLT PWR MOSFET 1500V 6A |
auf Bestellung 165 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTH6N150 | Hersteller : Littelfuse |
Trans MOSFET N-CH 1.5KV 6A 3-Pin(3+Tab) TO-247 |
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IXTH6N150 | Hersteller : Littelfuse |
Trans MOSFET N-CH 1.5KV 6A 3-Pin(3+Tab) TO-247 |
Produkt ist nicht verfügbar |
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IXTH6N150 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.5kV; 6A; 540W; TO247-3; 1.5us Drain-source voltage: 1.5kV Drain current: 6A Type of transistor: N-MOSFET Power dissipation: 540W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: standard power mosfet Gate charge: 67nC Kind of channel: enhanced Mounting: THT Case: TO247-3 Reverse recovery time: 1.5µs Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXTH6N150 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.5kV; 6A; 540W; TO247-3; 1.5us Drain-source voltage: 1.5kV Drain current: 6A Type of transistor: N-MOSFET Power dissipation: 540W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: standard power mosfet Gate charge: 67nC Kind of channel: enhanced Mounting: THT Case: TO247-3 Reverse recovery time: 1.5µs |
Produkt ist nicht verfügbar |