IXTH52P10P IXYS
Hersteller: IXYSCategory: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -52A; 300W; TO247-3
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -52A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 157 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 8+ | 9.41 EUR |
| 11+ | 6.68 EUR |
| 12+ | 6.32 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IXTH52P10P IXYS
Description: MOSFET P-CH 100V 52A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 52A (Tc), Rds On (Max) @ Id, Vgs: 50mOhm @ 52A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-247 (IXTH), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2845 pF @ 25 V.
Weitere Produktangebote IXTH52P10P nach Preis ab 6.32 EUR bis 13.64 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
IXTH52P10P | Hersteller : IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -52A; 300W; TO247-3 Type of transistor: P-MOSFET Technology: PolarP™ Polarisation: unipolar Drain-source voltage: -100V Drain current: -52A Power dissipation: 300W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 50mΩ Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 120ns |
auf Bestellung 157 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
 |
IXTH52P10P | Hersteller : IXYS |
MOSFET -52.0 Amps -100V 0.050 Rds |
auf Bestellung 324 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
 |
IXTH52P10P | Hersteller : Littelfuse |
Trans MOSFET P-CH 100V 52A 3-Pin(3+Tab) TO-247 |
Produkt ist nicht verfügbar |
|||||||||||||
 |
IXTH52P10P | Hersteller : Littelfuse |
Trans MOSFET P-CH 100V 52A 3-Pin(3+Tab) TO-247 |
Produkt ist nicht verfügbar |
|||||||||||||
 |
IXTH52P10P | Hersteller : Littelfuse Inc. |
Description: MOSFET P-CH 100V 52A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 52A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-247 (IXTH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2845 pF @ 25 V |
Produkt ist nicht verfügbar |