auf Bestellung 300 Stücke:
Lieferzeit 409-413 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 15.68 EUR |
| 10+ | 13.45 EUR |
| 30+ | 10.54 EUR |
Produktrezensionen
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Technische Details IXTH4N150 IXYS
Description: MOSFET N-CH 1500V 4A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), Rds On (Max) @ Id, Vgs: 6Ohm @ 2A, 10V, Power Dissipation (Max): 280W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247 (IXTH), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1500 V, Gate Charge (Qg) (Max) @ Vgs: 44.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1576 pF @ 25 V.
Weitere Produktangebote IXTH4N150
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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IXTH4N150 | Hersteller : Littelfuse |
 Trans MOSFET N-CH 1.5KV 4A 3-Pin(3+Tab) TO-247 |
Produkt ist nicht verfügbar |
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IXTH4N150 | Hersteller : Littelfuse |
Trans MOSFET N-CH 1.5KV 4A 3-Pin(3+Tab) TO-247 |
Produkt ist nicht verfügbar |
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IXTH4N150 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.5kV; 4A; 280W; TO247-3; 900ns Drain-source voltage: 1.5kV Drain current: 4A On-state resistance: 6Ω Type of transistor: N-MOSFET Power dissipation: 280W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: standard power mosfet Gate charge: 44.5nC Kind of channel: enhanced Mounting: THT Case: TO247-3 Reverse recovery time: 900ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXTH4N150 | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 1500V 4A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 6Ohm @ 2A, 10V Power Dissipation (Max): 280W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247 (IXTH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1500 V Gate Charge (Qg) (Max) @ Vgs: 44.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1576 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXTH4N150 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.5kV; 4A; 280W; TO247-3; 900ns Drain-source voltage: 1.5kV Drain current: 4A On-state resistance: 6Ω Type of transistor: N-MOSFET Power dissipation: 280W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: standard power mosfet Gate charge: 44.5nC Kind of channel: enhanced Mounting: THT Case: TO247-3 Reverse recovery time: 900ns |
Produkt ist nicht verfügbar |