![IXTH40N50L2 IXTH40N50L2](https://www.mouser.com/images/mouserelectronics/lrg/TO_247_3_t.jpg)
auf Bestellung 1560 Stücke:
Lieferzeit 318-322 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 52.59 EUR |
10+ | 49.33 EUR |
30+ | 44.58 EUR |
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Technische Details IXTH40N50L2 IXYS
Description: MOSFET N-CH 500V 40A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 170mOhm @ 20A, 10V, Power Dissipation (Max): 540W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-247 (IXTH), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V.
Weitere Produktangebote IXTH40N50L2
Foto | Bezeichnung | Hersteller | Beschreibung |
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IXTH40N50L2 | Hersteller : Littelfuse |
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Produkt ist nicht verfügbar |
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IXTH40N50L2 | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO247-3; 500ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 40A Power dissipation: 540W Case: TO247-3 On-state resistance: 0.17Ω Mounting: THT Gate charge: 0.32µC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: linear power mosfet Reverse recovery time: 0.5µs Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXTH40N50L2 | Hersteller : Littelfuse Inc. |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 170mOhm @ 20A, 10V Power Dissipation (Max): 540W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-247 (IXTH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXTH40N50L2 | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO247-3; 500ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 40A Power dissipation: 540W Case: TO247-3 On-state resistance: 0.17Ω Mounting: THT Gate charge: 0.32µC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: linear power mosfet Reverse recovery time: 0.5µs |
Produkt ist nicht verfügbar |