IXTH3N150

IXTH3N150 Littelfuse Inc.


littelfuse_discrete_mosfets_n-channel_standard_ixth3n150_datasheet.pdf.pdf Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 1500V 3A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 7.3Ohm @ 1.5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 38.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 25 V
auf Bestellung 286 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+14.87 EUR
30+ 12.46 EUR
Mindestbestellmenge: 2
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Technische Details IXTH3N150 Littelfuse Inc.

Description: MOSFET N-CH 1500V 3A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), Rds On (Max) @ Id, Vgs: 7.3Ohm @ 1.5A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247 (IXTH), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1500 V, Gate Charge (Qg) (Max) @ Vgs: 38.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 25 V.

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IXTH3N150 IXTH3N150 Hersteller : IXYS media-3320446.pdf MOSFETs High Voltage Power MOSFET
auf Bestellung 292 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+16.44 EUR
IXTH3N150 IXTH3N150 Hersteller : Littelfuse media.pdf Trans MOSFET N-CH 1.5KV 3A 3-Pin(3+Tab) TO-247
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IXTH3N150 IXTH3N150 Hersteller : Littelfuse media.pdf Trans MOSFET N-CH 1.5KV 3A 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXTH3N150 IXTH3N150 Hersteller : IXYS IXTH3N150.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 3A; 250W; TO247-3; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 3A
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 38.6nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTH3N150 IXTH3N150 Hersteller : IXYS IXTH3N150.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 3A; 250W; TO247-3; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 3A
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 38.6nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
Produkt ist nicht verfügbar