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IXTH30N60P

IXTH30N60P IXYS

IXTH(Q,T,V)30N60P_S.pdf Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO247-3; 500ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO247-3
Features of semiconductor devices: standard power mosfet
Gate charge: 82nC
Kind of channel: enhanced
Reverse recovery time: 0.5µs
Drain-source voltage: 600V
Drain current: 30A
On-state resistance: 0.24Ω
Type of transistor: N-MOSFET
Power dissipation: 540W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 268 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
6+11.98 EUR
9+ 8.22 EUR
Mindestbestellmenge: 6
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Technische Details IXTH30N60P IXYS

Description: MOSFET N-CH 600V 30A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V, Power Dissipation (Max): 540W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247 (IXTH), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5050 pF @ 25 V.

Weitere Produktangebote IXTH30N60P nach Preis ab 8.22 EUR bis 17.11 EUR

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IXTH30N60P IXTH30N60P Hersteller : IXYS IXTH(Q,T,V)30N60P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO247-3; 500ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO247-3
Features of semiconductor devices: standard power mosfet
Gate charge: 82nC
Kind of channel: enhanced
Reverse recovery time: 0.5µs
Drain-source voltage: 600V
Drain current: 30A
On-state resistance: 0.24Ω
Type of transistor: N-MOSFET
Power dissipation: 540W
auf Bestellung 268 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
6+11.98 EUR
9+ 8.22 EUR
Mindestbestellmenge: 6
IXTH30N60P IXTH30N60P Hersteller : IXYS media-3323016.pdf MOSFETs 30.0 Amps 600 V 0.24 Ohm Rds
auf Bestellung 615 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+17.05 EUR
10+ 15.84 EUR
30+ 13.45 EUR
120+ 12.18 EUR
270+ 11.81 EUR
510+ 10.75 EUR
1020+ 9.91 EUR
IXTH30N60P IXTH30N60P Hersteller : Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_standard_ixt_30n60p_datasheet.pdf.pdf Description: MOSFET N-CH 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5050 pF @ 25 V
auf Bestellung 601 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+17.11 EUR
30+ 13.65 EUR
120+ 12.21 EUR
510+ 10.77 EUR
Mindestbestellmenge: 2
IXTH30N60P IXTH30N60P Hersteller : Littelfuse rete_mosfets_n-channel_standard_ixt_30n60p_datasheet.pdf.pdf Trans MOSFET N-CH 600V 30A 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXTH30N60P IXTH30N60P Hersteller : Littelfuse rete_mosfets_n-channel_standard_ixt_30n60p_datasheet.pdf.pdf Trans MOSFET N-CH 600V 30A 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar