IXTH30N50P Littelfuse Inc.
Hersteller: Littelfuse Inc.Description: MOSFET N-CH 500V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 15A, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V
auf Bestellung 690 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 30+ | 11.61 EUR |
| 90+ | 10.38 EUR |
| 300+ | 9.77 EUR |
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Technische Details IXTH30N50P Littelfuse Inc.
Description: MOSFET N-CH 500V 30A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 200mOhm @ 15A, 10V, Power Dissipation (Max): 460W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247 (IXTH), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V.
Weitere Produktangebote IXTH30N50P nach Preis ab 7.92 EUR bis 14.94 EUR
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IXTH30N50P | Hersteller : IXYS |
MOSFET 30.0 Amps 500 V 0.2 Ohm Rds |
auf Bestellung 340 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTH30N50P | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO247-3; 400ns Mounting: THT Polarisation: unipolar Kind of package: tube Case: TO247-3 Features of semiconductor devices: standard power mosfet Gate charge: 70nC Kind of channel: enhanced Reverse recovery time: 400ns Drain-source voltage: 500V Drain current: 30A On-state resistance: 0.2Ω Type of transistor: N-MOSFET Power dissipation: 460W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXTH30N50P | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO247-3; 400ns Mounting: THT Polarisation: unipolar Kind of package: tube Case: TO247-3 Features of semiconductor devices: standard power mosfet Gate charge: 70nC Kind of channel: enhanced Reverse recovery time: 400ns Drain-source voltage: 500V Drain current: 30A On-state resistance: 0.2Ω Type of transistor: N-MOSFET Power dissipation: 460W |
Produkt ist nicht verfügbar |