auf Bestellung 23 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 71.81 EUR |
| 10+ | 63.98 EUR |
| 30+ | 60.17 EUR |
| 60+ | 58.15 EUR |
| 120+ | 56.16 EUR |
| 270+ | 54.14 EUR |
| 510+ | 51.64 EUR |
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Technische Details IXTH2N300P3HV IXYS
Description: MOSFET N-CH 3000V 2A TO247HV, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Tc), Rds On (Max) @ Id, Vgs: 21Ohm @ 1A, 10V, Power Dissipation (Max): 520W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247HV, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 3000 V, Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V.
Weitere Produktangebote IXTH2N300P3HV
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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IXTH2N300P3HV | Hersteller : IXYS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 3kV; 2A; 520W; TO247HV; 400ns Mounting: THT Case: TO247HV Polarisation: unipolar Type of transistor: N-MOSFET Power dissipation: 520W On-state resistance: 21Ω Kind of package: tube Drain current: 2A Drain-source voltage: 3kV Reverse recovery time: 400ns Features of semiconductor devices: standard power mosfet Gate charge: 73nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXTH2N300P3HV | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 3000V 2A TO247HV Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 21Ohm @ 1A, 10V Power Dissipation (Max): 520W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247HV Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 3000 V Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXTH2N300P3HV | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 3kV; 2A; 520W; TO247HV; 400ns Mounting: THT Case: TO247HV Polarisation: unipolar Type of transistor: N-MOSFET Power dissipation: 520W On-state resistance: 21Ω Kind of package: tube Drain current: 2A Drain-source voltage: 3kV Reverse recovery time: 400ns Features of semiconductor devices: standard power mosfet Gate charge: 73nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |