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IXTH12N150 IXYS
![IXT_12N150.pdf](/images/adobe-acrobat.png)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 12A; 890W; TO247-3; 1.2us
Drain-source voltage: 1.5kV
Drain current: 12A
Type of transistor: N-MOSFET
Power dissipation: 890W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 106nC
Kind of channel: enhanced
Mounting: THT
Case: TO247-3
Reverse recovery time: 1.2µs
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
5+ | 15.82 EUR |
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Technische Details IXTH12N150 IXYS
Description: MOSFET N-CH 1500V 12A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 2Ohm @ 6A, 10V, Power Dissipation (Max): 890W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-247 (IXTH), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1500 V, Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3720 pF @ 25 V.
Weitere Produktangebote IXTH12N150 nach Preis ab 15.82 EUR bis 25.91 EUR
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IXTH12N150 | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1.5kV; 12A; 890W; TO247-3; 1.2us Drain-source voltage: 1.5kV Drain current: 12A Type of transistor: N-MOSFET Power dissipation: 890W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: standard power mosfet Gate charge: 106nC Kind of channel: enhanced Mounting: THT Case: TO247-3 Reverse recovery time: 1.2µs |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTH12N150 | Hersteller : IXYS |
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auf Bestellung 3 Stücke: Lieferzeit 610-614 Tag (e) |
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IXTH12N150 | Hersteller : Littelfuse |
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Produkt ist nicht verfügbar |
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IXTH12N150 | Hersteller : Littelfuse |
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Produkt ist nicht verfügbar |
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IXTH12N150 | Hersteller : Littelfuse Inc. |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 6A, 10V Power Dissipation (Max): 890W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-247 (IXTH) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1500 V Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3720 pF @ 25 V |
Produkt ist nicht verfügbar |