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IXTH12N100L Littelfuse Inc.
![littelfuse_discrete_mosfets_n-channel_linear_ixth12n100l_datasheet.pdf.pdf](/images/adobe-acrobat.png)
Description: MOSFET N-CH 1000V 12A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 500mA, 20V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
auf Bestellung 62 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 35.22 EUR |
30+ | 29.2 EUR |
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Technische Details IXTH12N100L Littelfuse Inc.
Description: MOSFET N-CH 1000V 12A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 1.3Ohm @ 500mA, 20V, Power Dissipation (Max): 400W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247 (IXTH), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V.
Weitere Produktangebote IXTH12N100L nach Preis ab 27.6 EUR bis 35.48 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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IXTH12N100L | Hersteller : IXYS |
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auf Bestellung 1230 Stücke: Lieferzeit 381-385 Tag (e) |
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IXTH12N100L | Hersteller : Littelfuse |
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Produkt ist nicht verfügbar |
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IXTH12N100L | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; 400W; TO247-3; 1us Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 12A Power dissipation: 400W Case: TO247-3 On-state resistance: 1.3Ω Mounting: THT Gate charge: 155nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: linear power mosfet Reverse recovery time: 1µs Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXTH12N100L | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; 400W; TO247-3; 1us Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 12A Power dissipation: 400W Case: TO247-3 On-state resistance: 1.3Ω Mounting: THT Gate charge: 155nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: linear power mosfet Reverse recovery time: 1µs |
Produkt ist nicht verfügbar |