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IXTH110N25T

IXTH110N25T IXYS


IXTH110N25T.pdf Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 110A; 694W; TO247-3; 170ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 110A
Power dissipation: 694W
Case: TO247-3
On-state resistance: 26mΩ
Mounting: THT
Gate charge: 157nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 170ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
6+11.91 EUR
Mindestbestellmenge: 6
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Technische Details IXTH110N25T IXYS

Description: MOSFET N-CH 250V 110A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), Rds On (Max) @ Id, Vgs: 24mOhm @ 55A, 10V, Power Dissipation (Max): 694W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1mA, Supplier Device Package: TO-247 (IXTH), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V.

Weitere Produktangebote IXTH110N25T nach Preis ab 9.94 EUR bis 16.17 EUR

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IXTH110N25T IXTH110N25T Hersteller : IXYS IXTH110N25T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 110A; 694W; TO247-3; 170ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 110A
Power dissipation: 694W
Case: TO247-3
On-state resistance: 26mΩ
Mounting: THT
Gate charge: 157nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 170ns
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
6+11.91 EUR
Mindestbestellmenge: 6
IXTH110N25T IXTH110N25T Hersteller : IXYS media-3319994.pdf MOSFET 110 Amps 250V
auf Bestellung 121 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+16.05 EUR
10+ 14.78 EUR
30+ 12.64 EUR
120+ 11.7 EUR
270+ 10.37 EUR
510+ 9.94 EUR
IXTH110N25T IXTH110N25T Hersteller : Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_trench_gate_ixth110n25t_datasheet.pdf.pdf Description: MOSFET N-CH 250V 110A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 55A, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V
auf Bestellung 71 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+16.17 EUR
30+ 12.9 EUR
Mindestbestellmenge: 2
IXTH110N25T IXTH110N25T Hersteller : Littelfuse _mosfets_n-channel_trench_gate_ixth110n25t_datasheet.pdf.pdf Trans MOSFET N-CH 250V 110A 3-Pin(3+Tab) TO-247AD
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