IXTA80N10T Littelfuse Inc.
![littelfuse_discrete_mosfets_n-channel_trench_gate_ixtp80n10t_datasheet.pdf.pdf](/images/adobe-acrobat.png)
Description: MOSFET N-CH 100V 80A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 25A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3040 pF @ 25 V
auf Bestellung 3730 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3+ | 6.04 EUR |
50+ | 4.77 EUR |
100+ | 4.09 EUR |
500+ | 3.64 EUR |
1000+ | 3.11 EUR |
2000+ | 2.93 EUR |
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Technische Details IXTA80N10T Littelfuse Inc.
Description: MOSFET N-CH 100V 80A TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 14mOhm @ 25A, 10V, Power Dissipation (Max): 230W (Tc), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: TO-263AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3040 pF @ 25 V.
Weitere Produktangebote IXTA80N10T
Foto | Bezeichnung | Hersteller | Beschreibung |
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IXTA80N10T | Hersteller : Littelfuse |
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IXTA80N10T | Hersteller : Littelfuse |
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IXTA80N10T | Hersteller : Ixys Corporation |
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Produkt ist nicht verfügbar |
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IXTA80N10T | Hersteller : Ixys Corporation |
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Produkt ist nicht verfügbar |
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IXTA80N10T | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 230W; TO263; 100ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 80A Power dissipation: 230W Case: TO263 On-state resistance: 14mΩ Mounting: SMD Gate charge: 60nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 100ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXTA80N10T | Hersteller : IXYS |
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Produkt ist nicht verfügbar |
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IXTA80N10T | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 230W; TO263; 100ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 80A Power dissipation: 230W Case: TO263 On-state resistance: 14mΩ Mounting: SMD Gate charge: 60nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 100ns |
Produkt ist nicht verfügbar |