![IXTA3N50D2 IXTA3N50D2](https://www.mouser.com/images/mouserelectronics/lrg/TO_263_AC_3_SPL.jpg)
auf Bestellung 456 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 8.13 EUR |
10+ | 6.85 EUR |
50+ | 5.93 EUR |
100+ | 5.33 EUR |
250+ | 5.1 EUR |
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Technische Details IXTA3N50D2 IXYS
Description: MOSFET N-CH 500V 3A TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 0V, FET Feature: Depletion Mode, Power Dissipation (Max): 125W (Tc), Supplier Device Package: TO-263AA, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 25 V.
Weitere Produktangebote IXTA3N50D2 nach Preis ab 4.93 EUR bis 8.15 EUR
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IXTA3N50D2 | Hersteller : Littelfuse Inc. |
![]() Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 0V FET Feature: Depletion Mode Power Dissipation (Max): 125W (Tc) Supplier Device Package: TO-263AA Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 25 V |
auf Bestellung 731 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTA3N50D2 | Hersteller : Littelfuse |
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Produkt ist nicht verfügbar |
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IXTA3N50D2 | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 125W; TO263; 24ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 3A Power dissipation: 125W Case: TO263 On-state resistance: 1.5Ω Mounting: SMD Gate charge: 1.07µC Kind of package: tube Kind of channel: depleted Reverse recovery time: 24ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXTA3N50D2 | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 125W; TO263; 24ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 3A Power dissipation: 125W Case: TO263 On-state resistance: 1.5Ω Mounting: SMD Gate charge: 1.07µC Kind of package: tube Kind of channel: depleted Reverse recovery time: 24ns |
Produkt ist nicht verfügbar |