IXTA3N150HV IXYS
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 3A; 250W; TO263; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 3A
Power dissipation: 250W
Case: TO263
Mounting: SMD
Gate charge: 38.6nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 3A; 250W; TO263; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 3A
Power dissipation: 250W
Case: TO263
Mounting: SMD
Gate charge: 38.6nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 72 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
6+ | 13.99 EUR |
8+ | 9.45 EUR |
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Technische Details IXTA3N150HV IXYS
Description: MOSFET N-CH 1500V 3A TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), Rds On (Max) @ Id, Vgs: 7.3Ohm @ 1.5A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-263AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1500 V, Gate Charge (Qg) (Max) @ Vgs: 38.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 25 V.
Weitere Produktangebote IXTA3N150HV nach Preis ab 9.45 EUR bis 17.58 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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IXTA3N150HV | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.5kV; 3A; 250W; TO263; 900ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.5kV Drain current: 3A Power dissipation: 250W Case: TO263 Mounting: SMD Gate charge: 38.6nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 900ns |
auf Bestellung 72 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTA3N150HV | Hersteller : IXYS | MOSFETs MSFT N-CH STD-HI VOLTAGE |
auf Bestellung 336 Stücke: Lieferzeit 461-465 Tag (e) |
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IXTA3N150HV | Hersteller : Littelfuse | Trans MOSFET N-CH 1.5KV 3A 3-Pin(2+Tab) TO-263HV |
Produkt ist nicht verfügbar |
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IXTA3N150HV | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 1500V 3A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 7.3Ohm @ 1.5A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1500 V Gate Charge (Qg) (Max) @ Vgs: 38.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 25 V |
Produkt ist nicht verfügbar |