auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 50+ | 4.08 EUR |
| 100+ | 3.22 EUR |
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Technische Details IXTA1R6N100D2 Littelfuse
Description: MOSFET N-CH 1000V 1.6A TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc), Rds On (Max) @ Id, Vgs: 10Ohm @ 800mA, 0V, FET Feature: Depletion Mode, Power Dissipation (Max): 100W (Tc), Supplier Device Package: TO-263AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V.
Weitere Produktangebote IXTA1R6N100D2 nach Preis ab 3.43 EUR bis 6.09 EUR
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IXTA1R6N100D2 | Hersteller : Littelfuse |
 Trans MOSFET N-CH 1KV 1.6A 3-Pin(2+Tab) D2PAK |
auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTA1R6N100D2 | Hersteller : IXYS |
MOSFET N-CH MOSFETS (D2) 1000V 800MA |
auf Bestellung 15 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTA1R6N100D2 | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 1000V 1.6A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc) Rds On (Max) @ Id, Vgs: 10Ohm @ 800mA, 0V FET Feature: Depletion Mode Power Dissipation (Max): 100W (Tc) Supplier Device Package: TO-263AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTA1R6N100D2 | Hersteller : Littelfuse |
Trans MOSFET N-CH 1KV 1.6A 3-Pin(2+Tab) D2PAK |
Produkt ist nicht verfügbar |
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IXTA1R6N100D2 | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO263; 11ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 1.6A Power dissipation: 100W Case: TO263 Gate-source voltage: ±20V On-state resistance: 10Ω Mounting: SMD Gate charge: 645nC Kind of package: tube Kind of channel: depleted Reverse recovery time: 11ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXTA1R6N100D2 | Hersteller : Littelfuse |
Trans MOSFET N-CH 1KV 1.6A 3-Pin(2+Tab) D2PAK |
Produkt ist nicht verfügbar |
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IXTA1R6N100D2 | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO263; 11ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 1.6A Power dissipation: 100W Case: TO263 Gate-source voltage: ±20V On-state resistance: 10Ω Mounting: SMD Gate charge: 645nC Kind of package: tube Kind of channel: depleted Reverse recovery time: 11ns |
Produkt ist nicht verfügbar |