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IXTA170N075T2 IXYS

Name: IXTA170N075T2
Brand: IXYS
SKU: 455279022-1
Price: 2.85 EUR
Availability: InStock

Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 360W; TO263; 63ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 170A
Power dissipation: 360W
Case: TO263
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 109nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 63ns
Anzahl je Verpackung: 1 Stücke

auf Bestellung 49 Stücke:

Lieferzeit 7-14 Tag (e)

Anzahl	Preis ohne MwSt
18+	4.2 EUR
19+	3.78 EUR
24+	3 EUR
26+	2.85 EUR

Mindestbestellmenge: 18

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Technische Details IXTA170N075T2 IXYS

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 360W; TO263; 63ns, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 75V, Drain current: 170A, Power dissipation: 360W, Case: TO263, On-state resistance: 5.4mΩ, Mounting: SMD, Gate charge: 109nC, Kind of package: tube, Kind of channel: enhanced, Features of semiconductor devices: thrench gate power mosfet, Reverse recovery time: 63ns, Anzahl je Verpackung: 1 Stücke.

Weitere Produktangebote IXTA170N075T2 nach Preis ab 2.85 EUR bis 4.2 EUR

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IXTA170N075T2

Hersteller : IXYS

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 360W; TO263; 63ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 170A
Power dissipation: 360W
Case: TO263
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 109nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 63ns

auf Bestellung 49 Stücke:

Lieferzeit 14-21 Tag (e)