IXTA130N10T Littelfuse Inc.
![littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_130n10t_1of2_datasheet.pdf.pdf](/images/adobe-acrobat.png)
Description: MOSFET N-CH 100V 130A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 25A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V
auf Bestellung 1350 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3+ | 7.52 EUR |
50+ | 5.96 EUR |
100+ | 5.11 EUR |
500+ | 4.54 EUR |
1000+ | 3.89 EUR |
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Technische Details IXTA130N10T Littelfuse Inc.
Description: MOSFET N-CH 100V 130A TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 130A (Tc), Rds On (Max) @ Id, Vgs: 9.1mOhm @ 25A, 10V, Power Dissipation (Max): 360W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-263AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V.
Weitere Produktangebote IXTA130N10T
Foto | Bezeichnung | Hersteller | Beschreibung |
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IXTA130N10T | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A Type of transistor: N-MOSFET Technology: TrenchMV™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 130A Pulsed drain current: 350A Power dissipation: 360W Case: TO263 Gate-source voltage: ±30V On-state resistance: 9.1mΩ Mounting: SMD Gate charge: 104nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 77ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXTA130N10T | Hersteller : IXYS |
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Produkt ist nicht verfügbar |
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IXTA130N10T | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A Type of transistor: N-MOSFET Technology: TrenchMV™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 130A Pulsed drain current: 350A Power dissipation: 360W Case: TO263 Gate-source voltage: ±30V On-state resistance: 9.1mΩ Mounting: SMD Gate charge: 104nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 77ns |
Produkt ist nicht verfügbar |