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IXTA120N075T2 IXYS
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Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 250W; TO263; 50ns
Type of transistor: N-MOSFET
Mounting: SMD
Case: TO263
On-state resistance: 7.7mΩ
Kind of package: tube
Power dissipation: 250W
Polarisation: unipolar
Drain-source voltage: 75V
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 78nC
Reverse recovery time: 50ns
Kind of channel: enhanced
Drain current: 120A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 16 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
16+ | 4.46 EUR |
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Technische Details IXTA120N075T2 IXYS
Description: MOSFET N-CH 75V 120A TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 7.7mOhm @ 60A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 75 V, Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4740 pF @ 25 V.
Weitere Produktangebote IXTA120N075T2 nach Preis ab 4.46 EUR bis 4.46 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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IXTA120N075T2 | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 250W; TO263; 50ns Type of transistor: N-MOSFET Mounting: SMD Case: TO263 On-state resistance: 7.7mΩ Kind of package: tube Power dissipation: 250W Polarisation: unipolar Drain-source voltage: 75V Features of semiconductor devices: thrench gate power mosfet Gate charge: 78nC Reverse recovery time: 50ns Kind of channel: enhanced Drain current: 120A |
auf Bestellung 16 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTA120N075T2 | Hersteller : Littelfuse Inc. |
![]() Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 7.7mOhm @ 60A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4740 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXTA120N075T2 | Hersteller : IXYS |
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Produkt ist nicht verfügbar |