![IXFX520N075T2 IXFX520N075T2](https://www.mouser.com/images/mouserelectronics/lrg/TO_247_3_t.jpg)
auf Bestellung 280 Stücke:
Lieferzeit 199-203 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 25.33 EUR |
10+ | 20.5 EUR |
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Technische Details IXFX520N075T2 IXYS
Description: MOSFET N-CH 75V 520A PLUS247-3, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 520A (Tc), Rds On (Max) @ Id, Vgs: 2.2mOhm @ 100A, 10V, Power Dissipation (Max): 1250W (Tc), Vgs(th) (Max) @ Id: 5V @ 8mA, Supplier Device Package: PLUS247™-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 75 V, Gate Charge (Qg) (Max) @ Vgs: 545 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 41000 pF @ 25 V.
Weitere Produktangebote IXFX520N075T2
Foto | Bezeichnung | Hersteller | Beschreibung |
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IXFX520N075T2 Produktcode: 168486 |
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IXFX520N075T2 | Hersteller : Littelfuse |
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Produkt ist nicht verfügbar |
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IXFX520N075T2 | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 75V; 520A; 1250W; PLUS247™ Type of transistor: N-MOSFET Mounting: THT Case: PLUS247™ On-state resistance: 2.2mΩ Kind of package: tube Power dissipation: 1.25kW Polarisation: unipolar Drain-source voltage: 75V Features of semiconductor devices: thrench gate power mosfet Gate charge: 545nC Kind of channel: enhanced Drain current: 520A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXFX520N075T2 | Hersteller : Littelfuse Inc. |
![]() Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 520A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 100A, 10V Power Dissipation (Max): 1250W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: PLUS247™-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 545 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 41000 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXFX520N075T2 | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 75V; 520A; 1250W; PLUS247™ Type of transistor: N-MOSFET Mounting: THT Case: PLUS247™ On-state resistance: 2.2mΩ Kind of package: tube Power dissipation: 1.25kW Polarisation: unipolar Drain-source voltage: 75V Features of semiconductor devices: thrench gate power mosfet Gate charge: 545nC Kind of channel: enhanced Drain current: 520A |
Produkt ist nicht verfügbar |