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IXFX120N30T

IXFX120N30T IXYS


media-3319565.pdf Hersteller: IXYS
MOSFETs 120V 300V
auf Bestellung 26 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+23.67 EUR
10+ 20.87 EUR
30+ 20.29 EUR
60+ 18.73 EUR
120+ 17.69 EUR
270+ 16.72 EUR
510+ 16.4 EUR
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Technische Details IXFX120N30T IXYS

Description: MOSFET N-CH 300V 120A PLUS247-3, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 10V, Power Dissipation (Max): 960W (Tc), Vgs(th) (Max) @ Id: 5V @ 4mA, Supplier Device Package: PLUS247™-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 300 V, Gate Charge (Qg) (Max) @ Vgs: 265 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V.

Weitere Produktangebote IXFX120N30T

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IXFX120N30T IXFX120N30T Hersteller : IXYS IXFK(X)120N30T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 960W; PLUS247™
Case: PLUS247™
Mounting: THT
Kind of package: tube
Power dissipation: 960W
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 265nC
Kind of channel: enhanced
Drain-source voltage: 300V
Drain current: 120A
On-state resistance: 24mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXFX120N30T IXFX120N30T Hersteller : Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_120n30t_datasheet.pdf.pdf Description: MOSFET N-CH 300V 120A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 265 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V
Produkt ist nicht verfügbar
IXFX120N30T IXFX120N30T Hersteller : IXYS IXFK(X)120N30T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 960W; PLUS247™
Case: PLUS247™
Mounting: THT
Kind of package: tube
Power dissipation: 960W
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 265nC
Kind of channel: enhanced
Drain-source voltage: 300V
Drain current: 120A
On-state resistance: 24mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar