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IXFT24N90P Littelfuse Inc.
![littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_24n90p_datasheet.pdf.pdf](/images/adobe-acrobat.png)
Description: MOSFET N-CH 900V 24A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 12A, 10V
Power Dissipation (Max): 660W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
auf Bestellung 570 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 19.22 EUR |
30+ | 16.12 EUR |
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Technische Details IXFT24N90P Littelfuse Inc.
Description: MOSFET N-CH 900V 24A TO268, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 420mOhm @ 12A, 10V, Power Dissipation (Max): 660W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 1mA, Supplier Device Package: TO-268AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V.
Weitere Produktangebote IXFT24N90P nach Preis ab 14.54 EUR bis 19.69 EUR
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IXFT24N90P | Hersteller : IXYS |
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auf Bestellung 152 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFT24N90P | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 24A; 660W; TO268 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 900V Drain current: 24A Power dissipation: 660W Case: TO268 Gate-source voltage: ±30V On-state resistance: 0.42Ω Mounting: SMD Gate charge: 130nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 300ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 296 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFT24N90P | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 24A; 660W; TO268 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 900V Drain current: 24A Power dissipation: 660W Case: TO268 Gate-source voltage: ±30V On-state resistance: 0.42Ω Mounting: SMD Gate charge: 130nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 300ns |
auf Bestellung 296 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFT24N90P | Hersteller : Littelfuse |
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