auf Bestellung 505 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 33.46 EUR |
| 10+ | 29.99 EUR |
| 30+ | 28.27 EUR |
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Technische Details IXFT220N20X3HV IXYS
Description: MOSFET N-CH 200V 220A TO268HV, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 220A (Tc), Rds On (Max) @ Id, Vgs: 6.2mOhm @ 110A, 10V, Power Dissipation (Max): 960W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 4mA, Supplier Device Package: TO-268HV (IXFT), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V.
Weitere Produktangebote IXFT220N20X3HV nach Preis ab 22.43 EUR bis 33.83 EUR
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IXFT220N20X3HV | Hersteller : Littelfuse Inc. |
 Description: MOSFET N-CH 200V 220A TO268HVPackaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 220A (Tc) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 110A, 10V Power Dissipation (Max): 960W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 4mA Supplier Device Package: TO-268HV (IXFT) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V |
auf Bestellung 1594 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFT220N20X3HV | Hersteller : Littelfuse |
Trans MOSFET N-CH 200V 220A 3-Pin(2+Tab) TO-268HV |
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IXFT220N20X3HV | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 220A; 960W; TO268 Case: TO268 Mounting: SMD Kind of package: tube On-state resistance: 6.2mΩ Type of transistor: N-MOSFET Power dissipation: 960W Polarisation: unipolar Gate charge: 204nC Technology: HiPerFET™; X3-Class Kind of channel: enhanced Gate-source voltage: ±20V Reverse recovery time: 116ns Drain-source voltage: 200V Drain current: 220A Anzahl je Verpackung: 1 Stücke |
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IXFT220N20X3HV | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 220A; 960W; TO268 Case: TO268 Mounting: SMD Kind of package: tube On-state resistance: 6.2mΩ Type of transistor: N-MOSFET Power dissipation: 960W Polarisation: unipolar Gate charge: 204nC Technology: HiPerFET™; X3-Class Kind of channel: enhanced Gate-source voltage: ±20V Reverse recovery time: 116ns Drain-source voltage: 200V Drain current: 220A |
Produkt ist nicht verfügbar |