IXFT180N20X3HV Littelfuse Inc.
Hersteller: Littelfuse Inc.Description: MOSFET N-CH 200V 180A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 90A, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-268HV (IXFT)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V
auf Bestellung 29 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 20.52 EUR |
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Technische Details IXFT180N20X3HV Littelfuse Inc.
Description: MOSFET N-CH 200V 180A TO268HV, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 180A (Tc), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 90A, 10V, Power Dissipation (Max): 780W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 4mA, Supplier Device Package: TO-268HV (IXFT), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V.
Weitere Produktangebote IXFT180N20X3HV nach Preis ab 15.36 EUR bis 20.65 EUR
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IXFT180N20X3HV | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 180A; 780W; TO268 Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 200V Drain current: 180A Power dissipation: 780W Case: TO268 Gate-source voltage: ±20V On-state resistance: 7.5mΩ Mounting: SMD Gate charge: 154nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 94ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 27 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFT180N20X3HV | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 180A; 780W; TO268 Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 200V Drain current: 180A Power dissipation: 780W Case: TO268 Gate-source voltage: ±20V On-state resistance: 7.5mΩ Mounting: SMD Gate charge: 154nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 94ns |
auf Bestellung 27 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFT180N20X3HV | Hersteller : IXYS |
MOSFETs MSFT N-CH ULTRA JNCT X3 3&44 |
Produkt ist nicht verfügbar |