![IXFT120N15P IXFT120N15P](https://ce8dc832c.cloudimg.io/v7/_cdn_/28/B6/70/00/1/486274_1.jpg?width=640&height=480&wat=1&wat_url=_tme-wrk_%2Ftme_new.png&wat_scale=100p&ci_sign=5227dc0ff7717e34973b06a35433c9be6c541d11)
IXFT120N15P IXYS
![IXF_120N15P.pdf](/images/adobe-acrobat.png)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 120A; 600W; TO268
Case: TO268
Mounting: SMD
Kind of package: tube
Reverse recovery time: 200ns
Drain-source voltage: 150V
Drain current: 120A
On-state resistance: 16mΩ
Type of transistor: N-MOSFET
Power dissipation: 600W
Polarisation: unipolar
Gate charge: 150nC
Technology: HiPerFET™; PolarHT™
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
6+ | 12.41 EUR |
9+ | 8.32 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IXFT120N15P IXYS
Description: MOSFET N-CH 150V 120A TO268, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 16mOhm @ 500mA, 10V, Power Dissipation (Max): 600W (Tc), Vgs(th) (Max) @ Id: 5V @ 4mA, Supplier Device Package: TO-268AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V.
Weitere Produktangebote IXFT120N15P nach Preis ab 8.32 EUR bis 19.47 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
IXFT120N15P | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 120A; 600W; TO268 Case: TO268 Mounting: SMD Kind of package: tube Reverse recovery time: 200ns Drain-source voltage: 150V Drain current: 120A On-state resistance: 16mΩ Type of transistor: N-MOSFET Power dissipation: 600W Polarisation: unipolar Gate charge: 150nC Technology: HiPerFET™; PolarHT™ Kind of channel: enhanced Gate-source voltage: ±20V |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||
![]() |
IXFT120N15P | Hersteller : IXYS |
![]() |
auf Bestellung 177 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||
![]() |
IXFT120N15P | Hersteller : Littelfuse |
![]() |
Produkt ist nicht verfügbar |
|||||||||
![]() |
IXFT120N15P | Hersteller : Littelfuse Inc. |
![]() Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 500mA, 10V Power Dissipation (Max): 600W (Tc) Vgs(th) (Max) @ Id: 5V @ 4mA Supplier Device Package: TO-268AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V |
Produkt ist nicht verfügbar |