Technische Details IXFR64N60P Littelfuse
Description: MOSFET N-CH 600V 36A ISOPLUS247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 36A (Tc), Rds On (Max) @ Id, Vgs: 105mOhm @ 32A, 10V, Power Dissipation (Max): 320W (Tc), Vgs(th) (Max) @ Id: 5V @ 8mA, Supplier Device Package: ISOPLUS247™, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V.
Weitere Produktangebote IXFR64N60P
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IXFR64N60P | Hersteller : IXYS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 36A; 320W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 36A Power dissipation: 320W Case: ISOPLUS247™ On-state resistance: 0.105Ω Mounting: THT Gate charge: 200nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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IXFR64N60P | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 600V 36A ISOPLUS247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 32A, 10V Power Dissipation (Max): 320W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: ISOPLUS247™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXFR64N60P | Hersteller : IXYS |
MOSFET DIODE Id36 BVdass600 |
Produkt ist nicht verfügbar |
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IXFR64N60P | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 36A; 320W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 36A Power dissipation: 320W Case: ISOPLUS247™ On-state resistance: 0.105Ω Mounting: THT Gate charge: 200nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |