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IXFR64N50P

IXFR64N50P Littelfuse Inc.


media?resourcetype=datasheets&itemid=7A911174-2320-4791-A535-C28786C08C34&filename=Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXFR64N50P-Datasheet.PDF Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 500V 35A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 32A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 25 V
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Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+22.35 EUR
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Technische Details IXFR64N50P Littelfuse Inc.

Description: MOSFET N-CH 500V 35A ISOPLUS247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Rds On (Max) @ Id, Vgs: 95mOhm @ 32A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 8mA, Supplier Device Package: ISOPLUS247™, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 25 V.

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IXFR64N50P IXFR64N50P Hersteller : Littelfuse ete_mosfets_n-channel_hiperfets_ixfr64n50p_datasheet.pdf.pdf Trans MOSFET N-CH 500V 37A 3-Pin(3+Tab) ISOPLUS 247
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IXFR64N50P IXFR64N50P Hersteller : IXYS IXFR64N50P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 500V; 37A; 300W; 200ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; PolarHV™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 37A
Power dissipation: 300W
Case: ISOPLUS247™
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
Anzahl je Verpackung: 1 Stücke
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IXFR64N50P IXFR64N50P Hersteller : IXYS media-3321301.pdf MOSFET 500V 64A
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IXFR64N50P IXFR64N50P Hersteller : IXYS IXFR64N50P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 500V; 37A; 300W; 200ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; PolarHV™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 37A
Power dissipation: 300W
Case: ISOPLUS247™
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
Produkt ist nicht verfügbar