IXFR24N80P IXYS
Hersteller: IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 13A; 208W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Power dissipation: 208W
Case: ISOPLUS247™
On-state resistance: 0.42Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 8 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 17.12 EUR |
| 6+ | 12.27 EUR |
| 7+ | 11.6 EUR |
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Technische Details IXFR24N80P IXYS
Description: MOSFET N-CH 800V 13A ISOPLUS247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), Rds On (Max) @ Id, Vgs: 420mOhm @ 12A, 10V, Power Dissipation (Max): 208W (Tc), Vgs(th) (Max) @ Id: 5V @ 4mA, Supplier Device Package: ISOPLUS247™, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V.
Weitere Produktangebote IXFR24N80P nach Preis ab 11.6 EUR bis 17.12 EUR
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IXFR24N80P | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 13A; 208W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 13A Power dissipation: 208W Case: ISOPLUS247™ On-state resistance: 0.42Ω Mounting: THT Gate charge: 105nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 8 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFR24N80P | Hersteller : Littelfuse |
Trans MOSFET N-CH Si 800V 13A 3-Pin(3+Tab) ISOPLUS 247 |
Produkt ist nicht verfügbar |
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IXFR24N80P | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 800V 13A ISOPLUS247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 420mOhm @ 12A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 5V @ 4mA Supplier Device Package: ISOPLUS247™ Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXFR24N80P | Hersteller : IXYS |
MOSFET 14 Amps 800V 0.42 Rds |
Produkt ist nicht verfügbar |