![IXFQ8N85X IXFQ8N85X](https://www.mouser.com/images/mouserelectronics/lrg/TO_3P_SPL.jpg)
auf Bestellung 283 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
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1+ | 10.28 EUR |
10+ | 8.62 EUR |
30+ | 8.15 EUR |
120+ | 6.97 EUR |
270+ | 6.72 EUR |
510+ | 6.2 EUR |
1020+ | 5.39 EUR |
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Technische Details IXFQ8N85X IXYS
Description: MOSFET N-CH 850V 8A TO3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V, Power Dissipation (Max): 200W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 250µA, Supplier Device Package: TO-3P, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 850 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 654 pF @ 25 V.
Weitere Produktangebote IXFQ8N85X nach Preis ab 7.15 EUR bis 14.3 EUR
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IXFQ8N85X | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 8A; Idm: 16A; 200W Type of transistor: N-MOSFET Technology: HiPerFET™; X-Class Polarisation: unipolar Drain-source voltage: 850V Drain current: 8A Pulsed drain current: 16A Power dissipation: 200W Case: TO3P Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: THT Gate charge: 17nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 125ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFQ8N85X | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 8A; Idm: 16A; 200W Type of transistor: N-MOSFET Technology: HiPerFET™; X-Class Polarisation: unipolar Drain-source voltage: 850V Drain current: 8A Pulsed drain current: 16A Power dissipation: 200W Case: TO3P Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: THT Gate charge: 17nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 125ns |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFQ8N85X | Hersteller : Littelfuse Inc. |
![]() Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 250µA Supplier Device Package: TO-3P Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 850 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 654 pF @ 25 V |
Produkt ist nicht verfügbar |