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IXFP8N85XM

IXFP8N85XM Littelfuse


media.pdf Hersteller: Littelfuse
Trans MOSFET N-CH 850V 8A 3-Pin(3+Tab) OVERMOLDED TO-220
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Technische Details IXFP8N85XM Littelfuse

Description: MOSFET N-CH 850V 8A TO220, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Isolated Tab, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V, Power Dissipation (Max): 33W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 250µA, Supplier Device Package: TO-220 Isolated Tab, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 850 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 654 pF @ 25 V.

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IXFP8N85XM Hersteller : Littelfuse osfets_n-channel_ultra_junction_ixfp8n85xm_datasheet.pdf.pdf Trans MOSFET N-CH 850V 8A 3-Pin(3+Tab) OVERMOLDED TO-220
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IXFP8N85XM IXFP8N85XM Hersteller : IXYS IXFP8N85XM.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 8A; 33W; TO220FP; 125ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 8A
Power dissipation: 33W
Case: TO220FP
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 125ns
Anzahl je Verpackung: 1 Stücke
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IXFP8N85XM IXFP8N85XM Hersteller : Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfp8n85xm_datasheet.pdf.pdf Description: MOSFET N-CH 850V 8A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220 Isolated Tab
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 850 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 654 pF @ 25 V
Produkt ist nicht verfügbar
IXFP8N85XM IXFP8N85XM Hersteller : IXYS media-3323110.pdf MOSFET MSFT N-CH ULTRA JNCT X3&44
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IXFP8N85XM IXFP8N85XM Hersteller : IXYS IXFP8N85XM.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 8A; 33W; TO220FP; 125ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 8A
Power dissipation: 33W
Case: TO220FP
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 125ns
Produkt ist nicht verfügbar