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IXFP7N80P IXYS
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Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 7A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.44Ω
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 32 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
16+ | 4.73 EUR |
18+ | 4.18 EUR |
20+ | 3.7 EUR |
21+ | 3.5 EUR |
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Technische Details IXFP7N80P IXYS
Description: MOSFET N-CH 800V 7A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), Rds On (Max) @ Id, Vgs: 1.44Ohm @ 3.5A, 10V, Power Dissipation (Max): 200W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V.
Weitere Produktangebote IXFP7N80P nach Preis ab 3.5 EUR bis 8.34 EUR
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IXFP7N80P | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 7A; 200W; TO220AB Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 7A Power dissipation: 200W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 1.44Ω Mounting: THT Gate charge: 32nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 250ns |
auf Bestellung 32 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFP7N80P | Hersteller : Littelfuse Inc. |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 1.44Ohm @ 3.5A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V |
auf Bestellung 999 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFP7N80P | Hersteller : IXYS |
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auf Bestellung 96 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFP7N80P | Hersteller : Littelfuse |
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