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IXFP22N65X2M

IXFP22N65X2M IXYS

IXFP22N65X2M.pdf Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 22A; 37W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 37W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 145ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 296 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
16+4.55 EUR
18+ 4.02 EUR
20+ 3.59 EUR
22+ 3.39 EUR
50+ 3.37 EUR
Mindestbestellmenge: 16
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Technische Details IXFP22N65X2M IXYS

Description: MOSFET N-CH 650V 22A TO220, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Isolated Tab, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 145mOhm @ 11A, 10V, Power Dissipation (Max): 37W (Tc), Vgs(th) (Max) @ Id: 5V @ 1.5mA, Supplier Device Package: TO-220 Isolated Tab, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 25 V.

Weitere Produktangebote IXFP22N65X2M nach Preis ab 3.37 EUR bis 8.04 EUR

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Preis ohne MwSt
IXFP22N65X2M IXFP22N65X2M Hersteller : IXYS IXFP22N65X2M.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 22A; 37W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 37W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 145ns
auf Bestellung 296 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
16+4.55 EUR
18+ 4.02 EUR
20+ 3.59 EUR
22+ 3.39 EUR
50+ 3.37 EUR
Mindestbestellmenge: 16
IXFP22N65X2M IXFP22N65X2M Hersteller : IXYS media-3319711.pdf MOSFETs 650V/22A OVERMOLDED TO-220
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+8.01 EUR
10+ 6.72 EUR
50+ 6.35 EUR
100+ 5.44 EUR
250+ 5.14 EUR
500+ 4.89 EUR
1000+ 4.26 EUR
IXFP22N65X2M IXFP22N65X2M Hersteller : Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfp22n65x2m_datasheet.pdf.pdf Description: MOSFET N-CH 650V 22A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 11A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-220 Isolated Tab
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 25 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+8.04 EUR
50+ 6.38 EUR
100+ 5.46 EUR
Mindestbestellmenge: 3
IXFP22N65X2M IXFP22N65X2M Hersteller : Littelfuse media.pdf Trans MOSFET N-CH 650V 22A 3-Pin(3+Tab) OVERMOLDED TO-220
Produkt ist nicht verfügbar
IXFP22N65X2M IXFP22N65X2M Hersteller : Littelfuse media.pdf Trans MOSFET N-CH 650V 22A 3-Pin(3+Tab) OVERMOLDED TO-220
Produkt ist nicht verfügbar