IXFP16N50P3 IXYS
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO220AB
Mounting: THT
Case: TO220AB
Kind of package: tube
Reverse recovery time: 250ns
Drain-source voltage: 500V
Drain current: 16A
On-state resistance: 0.36Ω
Type of transistor: N-MOSFET
Power dissipation: 330W
Polarisation: unipolar
Gate charge: 29nC
Technology: HiPerFET™; Polar3™
Kind of channel: enhanced
Gate-source voltage: ±30V
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO220AB
Mounting: THT
Case: TO220AB
Kind of package: tube
Reverse recovery time: 250ns
Drain-source voltage: 500V
Drain current: 16A
On-state resistance: 0.36Ω
Type of transistor: N-MOSFET
Power dissipation: 330W
Polarisation: unipolar
Gate charge: 29nC
Technology: HiPerFET™; Polar3™
Kind of channel: enhanced
Gate-source voltage: ±30V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 227 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
12+ | 6.11 EUR |
18+ | 4.06 EUR |
19+ | 3.85 EUR |
500+ | 3.73 EUR |
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Technische Details IXFP16N50P3 IXYS
Description: MOSFET N-CH 500V 16A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Rds On (Max) @ Id, Vgs: 360mOhm @ 8A, 10V, Power Dissipation (Max): 330W (Tc), Vgs(th) (Max) @ Id: 5V @ 2.5mA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 25 V.
Weitere Produktangebote IXFP16N50P3 nach Preis ab 3.85 EUR bis 8.68 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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IXFP16N50P3 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO220AB Mounting: THT Case: TO220AB Kind of package: tube Reverse recovery time: 250ns Drain-source voltage: 500V Drain current: 16A On-state resistance: 0.36Ω Type of transistor: N-MOSFET Power dissipation: 330W Polarisation: unipolar Gate charge: 29nC Technology: HiPerFET™; Polar3™ Kind of channel: enhanced Gate-source voltage: ±30V |
auf Bestellung 227 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFP16N50P3 | Hersteller : IXYS | MOSFET Polar3 HiPerFET Power MOSFET |
auf Bestellung 300 Stücke: Lieferzeit 318-322 Tag (e) |
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IXFP16N50P3 Produktcode: 202044 |
IC > IC andere |
Produkt ist nicht verfügbar
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IXFP16N50P3 | Hersteller : Littelfuse | Trans MOSFET N-CH 500V 16A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
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IXFP16N50P3 | Hersteller : IXYS |
Description: MOSFET N-CH 500V 16A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 8A, 10V Power Dissipation (Max): 330W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 25 V |
Produkt ist nicht verfügbar |