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IXFP130N10T2

IXFP130N10T2 IXYS

IXFA(P)130N10T2.pdf Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 10.1mΩ
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Anzahl je Verpackung: 1 Stücke
auf Bestellung 53 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
14+5.33 EUR
15+ 4.79 EUR
19+ 3.92 EUR
20+ 3.7 EUR
Mindestbestellmenge: 14
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Technische Details IXFP130N10T2 IXYS

Description: MOSFET N-CH 100V 130A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 130A (Tc), Rds On (Max) @ Id, Vgs: 9.1mOhm @ 65A, 10V, Power Dissipation (Max): 360W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1mA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V.

Weitere Produktangebote IXFP130N10T2 nach Preis ab 3.7 EUR bis 5.45 EUR

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IXFP130N10T2 IXFP130N10T2 Hersteller : IXYS IXFA(P)130N10T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 10.1mΩ
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 53 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
14+5.33 EUR
15+ 4.79 EUR
19+ 3.92 EUR
20+ 3.7 EUR
Mindestbestellmenge: 14
IXFP130N10T2 IXFP130N10T2 Hersteller : Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_130n10t2_datasheet.pdf.pdf Description: MOSFET N-CH 100V 130A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 65A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
auf Bestellung 700 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
300+5.45 EUR
Mindestbestellmenge: 300
IXFP130N10T2 IXFP130N10T2 Hersteller : IXYS media-3320877.pdf MOSFETs Trench T2 HiperFET Power MOSFET
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