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IXFP10N60P

IXFP10N60P Littelfuse Inc.

littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_10n60p_datasheet.pdf.pdf Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 600V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 740mOhm @ 5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 25 V
auf Bestellung 518 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.5 EUR
50+ 2.77 EUR
100+ 2.38 EUR
500+ 2.32 EUR
Mindestbestellmenge: 6
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Technische Details IXFP10N60P Littelfuse Inc.

Description: MOSFET N-CH 600V 10A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 740mOhm @ 5A, 10V, Power Dissipation (Max): 200W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 1mA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 25 V.

Weitere Produktangebote IXFP10N60P nach Preis ab 2.82 EUR bis 4.96 EUR

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IXFP10N60P IXFP10N60P Hersteller : IXYS IXFA(P)10N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; 200W; TO220AB; 120ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: TO220AB
On-state resistance: 0.74Ω
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 139 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
18+4.15 EUR
20+ 3.72 EUR
24+ 2.99 EUR
26+ 2.82 EUR
Mindestbestellmenge: 18
IXFP10N60P IXFP10N60P Hersteller : IXYS IXFA(P)10N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; 200W; TO220AB; 120ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: TO220AB
On-state resistance: 0.74Ω
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
auf Bestellung 139 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
18+4.15 EUR
20+ 3.72 EUR
24+ 2.99 EUR
26+ 2.82 EUR
Mindestbestellmenge: 18
IXFP10N60P IXFP10N60P Hersteller : IXYS media-3319600.pdf MOSFETs HiPERFET Id10 BVdass600
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+4.96 EUR
50+ 3.92 EUR
500+ 3.19 EUR
1000+ 3.15 EUR
IXFP10N60P IXFP10N60P Hersteller : Littelfuse ete_mosfets_n-channel_hiperfets_ixf_10n60p_datasheet.pdf.pdf Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220AB
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