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IXFN520N075T2 Littelfuse Inc.
![littelfuse_discrete_mosfets_n-channel_trench_gate_ixfn520n075t2_datasheet.pdf.pdf](/images/adobe-acrobat.png)
Description: MOSFET N-CH 75V 480A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 480A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 940W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 545 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 41000 pF @ 25 V
auf Bestellung 107 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 57.06 EUR |
10+ | 50.7 EUR |
100+ | 44.35 EUR |
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Technische Details IXFN520N075T2 Littelfuse Inc.
Description: MOSFET N-CH 75V 480A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 480A (Tc), Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V, Power Dissipation (Max): 940W (Tc), Vgs(th) (Max) @ Id: 5V @ 8mA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 75 V, Gate Charge (Qg) (Max) @ Vgs: 545 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 41000 pF @ 25 V.
Weitere Produktangebote IXFN520N075T2 nach Preis ab 44.55 EUR bis 137.64 EUR
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IXFN520N075T2 | Hersteller : IXYS |
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auf Bestellung 153 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFN520N075T2 | Hersteller : IXYS |
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auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFN520N075T2 Produktcode: 59603 |
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IXFN520N075T2 | Hersteller : Littelfuse |
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Produkt ist nicht verfügbar |
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IXFN520N075T2 | Hersteller : Littelfuse |
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Produkt ist nicht verfügbar |
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IXFN520N075T2 | Hersteller : IXYS |
![]() Description: Module; single transistor; 75V; 480A; SOT227B; screw; Idm: 1.5kA Case: SOT227B On-state resistance: 1.9mΩ Technology: GigaMOS™; HiPerFET™; TrenchT2™ Power dissipation: 940W Polarisation: unipolar Drain-source voltage: 75V Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Gate charge: 545nC Reverse recovery time: 150ns Semiconductor structure: single transistor Kind of channel: enhanced Gate-source voltage: ±30V Drain current: 480A Pulsed drain current: 1.5kA Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXFN520N075T2 | Hersteller : IXYS |
![]() Description: Module; single transistor; 75V; 480A; SOT227B; screw; Idm: 1.5kA Case: SOT227B On-state resistance: 1.9mΩ Technology: GigaMOS™; HiPerFET™; TrenchT2™ Power dissipation: 940W Polarisation: unipolar Drain-source voltage: 75V Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Gate charge: 545nC Reverse recovery time: 150ns Semiconductor structure: single transistor Kind of channel: enhanced Gate-source voltage: ±30V Drain current: 480A Pulsed drain current: 1.5kA |
Produkt ist nicht verfügbar |