IXFN40N90P Littelfuse Inc.
Hersteller: Littelfuse Inc.Description: MOSFET N-CH 900V 33A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 20A, 10V
Power Dissipation (Max): 695W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 25 V
auf Bestellung 90 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10+ | 57.44 EUR |
| 30+ | 54.02 EUR |
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Technische Details IXFN40N90P Littelfuse Inc.
Description: MOSFET N-CH 900V 33A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 33A (Tc), Rds On (Max) @ Id, Vgs: 210mOhm @ 20A, 10V, Power Dissipation (Max): 695W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 1mA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 25 V.
Weitere Produktangebote IXFN40N90P nach Preis ab 51.55 EUR bis 66.76 EUR
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IXFN40N90P | Hersteller : IXYS |
MOSFET Modules PolarHV HiPerFETs 500V-1.2Kv Red Rds |
auf Bestellung 242 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFN40N90P | Hersteller : Littelfuse |
Trans MOSFET N-CH 900V 33A 4-Pin SOT-227B |
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IXFN40N90P | Hersteller : Littelfuse |
Trans MOSFET N-CH 900V 33A 4-Pin SOT-227B |
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IXFN40N90P | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 900V; 33A; SOT227B; screw; Idm: 80A; 695W Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 900V Drain current: 33A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 0.23Ω Pulsed drain current: 80A Power dissipation: 695W Technology: HiPerFET™; Polar™ Kind of channel: enhanced Gate charge: 230nC Reverse recovery time: 300ns Gate-source voltage: ±40V Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
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IXFN40N90P | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 900V; 33A; SOT227B; screw; Idm: 80A; 695W Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 900V Drain current: 33A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 0.23Ω Pulsed drain current: 80A Power dissipation: 695W Technology: HiPerFET™; Polar™ Kind of channel: enhanced Gate charge: 230nC Reverse recovery time: 300ns Gate-source voltage: ±40V Mechanical mounting: screw |
Produkt ist nicht verfügbar |