IXFN360N15T2 IXYS
Hersteller: IXYSCategory: Transistor modules MOSFET
Description: Module; single transistor; 150V; 310A; SOT227B; screw; Idm: 900A
Case: SOT227B
Semiconductor structure: single transistor
Mechanical mounting: screw
Power dissipation: 1.07kW
Polarisation: unipolar
Drain current: 310A
Electrical mounting: screw
Reverse recovery time: 150ns
Type of module: MOSFET transistor
Gate charge: 715nC
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 900A
On-state resistance: 4mΩ
Drain-source voltage: 150V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 17 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 56.44 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IXFN360N15T2 IXYS
Description: MOSFET N-CH 150V 310A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 310A (Tc), Rds On (Max) @ Id, Vgs: 4mOhm @ 60A, 10V, Power Dissipation (Max): 1070W (Tc), Vgs(th) (Max) @ Id: 5V @ 8mA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 715 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 47500 pF @ 25 V.
Weitere Produktangebote IXFN360N15T2 nach Preis ab 56.44 EUR bis 83.28 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
IXFN360N15T2 | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 150V; 310A; SOT227B; screw; Idm: 900A Case: SOT227B Semiconductor structure: single transistor Mechanical mounting: screw Power dissipation: 1.07kW Polarisation: unipolar Drain current: 310A Electrical mounting: screw Reverse recovery time: 150ns Type of module: MOSFET transistor Gate charge: 715nC Technology: GigaMOS™; HiPerFET™; TrenchT2™ Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 900A On-state resistance: 4mΩ Drain-source voltage: 150V |
auf Bestellung 17 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||
 |
IXFN360N15T2 | Hersteller : IXYS |
Discrete Semiconductor Modules GigaMOS Trench T2 HiperFET PWR MOSFET |
auf Bestellung 294 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||
 |
IXFN360N15T2 | Hersteller : LITTELFUSE |
Description: LITTELFUSE - IXFN360N15T2 - MOSFET-Transistor, n-Kanal, 310 A, 150 V, 0.004 ohm, 10 V, 5 V tariffCode: 85412900 Drain-Source-Spannung Vds: 150V rohsCompliant: YES Dauer-Drainstrom Id: 310A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5V euEccn: NLR Verlustleistung: 1.07kW Produktpalette: GigaMOS TrenchT2 HiPERFET Series productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.004ohm SVHC: No SVHC (10-Jun-2022) |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||
 |
IXFN360N15T2 | Hersteller : Littelfuse |
Trans MOSFET N-CH 150V 310A 4-Pin SOT-227B |
auf Bestellung 275 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||
 |
IXFN360N15T2 | Hersteller : Littelfuse |
Trans MOSFET N-CH 150V 310A 4-Pin SOT-227B |
Produkt ist nicht verfügbar |
|||||||||
|
|
IXFN360N15T2 | Hersteller : Littelfuse |
Trans MOSFET N-CH 150V 310A 4-Pin SOT-227B |
Produkt ist nicht verfügbar |
|||||||||
 |
IXFN360N15T2 | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 150V 310A SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 310A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 60A, 10V Power Dissipation (Max): 1070W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 715 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 47500 pF @ 25 V |
Produkt ist nicht verfügbar |