auf Bestellung 39 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 46.24 EUR |
| 10+ | 42.79 EUR |
| 20+ | 40.27 EUR |
| 100+ | 38.42 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IXFN360N10T IXYS
Description: MOSFET N-CH 100V 360A SOT-227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 360A (Tc), Rds On (Max) @ Id, Vgs: 2.6mOhm @ 180A, 10V, Power Dissipation (Max): 830W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 505 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 36000 pF @ 25 V.
Weitere Produktangebote IXFN360N10T
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
IXFN360N10T Produktcode: 92649 |
 Transistoren > Transistoren IGBT, Leistungsmodule |
Produkt ist nicht verfügbar
|
||
 |
IXFN360N10T | Hersteller : Littelfuse |
Trans MOSFET N-CH 100V 360A 4-Pin SOT-227B |
Produkt ist nicht verfügbar |
|
 |
IXFN360N10T | Hersteller : Littelfuse |
Trans MOSFET N-CH 100V 360A 4-Pin SOT-227B |
Produkt ist nicht verfügbar |
|
 |
IXFN360N10T | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 100V; 360A; SOT227B; screw; Idm: 900A Mechanical mounting: screw Electrical mounting: screw Polarisation: unipolar Case: SOT227B Reverse recovery time: 130ns Drain-source voltage: 100V Drain current: 360A On-state resistance: 2.6mΩ Power dissipation: 830W Type of module: MOSFET transistor Gate charge: 525nC Technology: GigaMOS™; HiPerFET™ Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 900A Semiconductor structure: single transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|
 |
IXFN360N10T | Hersteller : IXYS SEMICONDUCTOR |
Description: IXYS SEMICONDUCTOR - IXFN360N10T - MOSFET-Transistor, GigaMOS™, n-Kanal, 360A, 100V, 0.0026 Ohm, 100V, 4.5V, SOT-227B Drain-Source-Spannung Vds: 100 Dauer-Drainstrom Id: 360 Rds(on)-Messspannung Vgs: 100 Verlustleistung Pd: 830 Produktpalette: Trench HiperFET Wandlerpolarität: n-Kanal Betriebswiderstand, Rds(on): 0.0026 Betriebstemperatur, max.: 175 Schwellenspannung Vgs: 4.5 SVHC: No SVHC (07-Jul-2017) |
Produkt ist nicht verfügbar |
|
 |
IXFN360N10T | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 100V 360A SOT-227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 360A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 180A, 10V Power Dissipation (Max): 830W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 505 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 36000 pF @ 25 V |
Produkt ist nicht verfügbar |
|
|
|
IXFN360N10T | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 100V; 360A; SOT227B; screw; Idm: 900A Mechanical mounting: screw Electrical mounting: screw Polarisation: unipolar Case: SOT227B Reverse recovery time: 130ns Drain-source voltage: 100V Drain current: 360A On-state resistance: 2.6mΩ Power dissipation: 830W Type of module: MOSFET transistor Gate charge: 525nC Technology: GigaMOS™; HiPerFET™ Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 900A Semiconductor structure: single transistor |
Produkt ist nicht verfügbar |